LOW TEMPERATURE HYDROGEN PLASMA CLEANING PROCESSES OF Si(100), Ge(100), AND SixGe1-x(100)

LOW TEMPERATURE HYDROGEN PLASMA CLEANING PROCESSES OF Si(100), Ge(100), AND SixGe1-x(100)

著者名:

掲載資料名:

Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

220

発行年:

1991

開始ページ:

21

終了ページ:

26

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991149 [155899114X]

言語:

英語

請求記号:

M23500/220

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015704
シリーズID:	PA00000011
会議名:	Symposium on silicon molecular beam epitaxy
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.29-1991.05.03

類似資料:

1 国際会議録 SURFACE ELECTRONIC STATES OF LOW TEMPERATURE H-PLASMA CLEANED Si(100) AND Ge(100) SURFACES Cho, Jaewon, Schneider, T.P., Nemanich, R.J. Materials Research Society	7 国際会議録 HYDROGEN PLASMA CLEANING PRIOR TO LOW TEMPERATURE GATE OXIDE DEPOSITION IN CLUSTER FABRICATED MOSFETs Montgomery, J.S., Barnak, J.P., Bayoumi, A., Hauser, J.R., Nemanich, R.J. Electrochemical Society
2 国際会議録 PROCESS AND SURFACE CHARACTERIZATION OF HYDROGEN PLASMA CLEANING OF Si(100) Schneider, T.P., Cho, J., Vander Weide, J., Wells, S.E., Lucovsky, G, Nemanich, R.J., Mantini, M.J., Rudder, R.A., … Materials Research Society	8 国際会議録 MBE GROWTH AND CHARACTERIZATION OF SixGe1-x MULTILAYER STRUCTURES ON Si(100) FOR USE AS A SUBSTRATE FOR GaAs HETEROEPITAXY Posthill, J.B., Malta, D.P., Venkatasubramanian, R., Sharps, P.R., Timmons, M.L., Markunas, R.J., Humphreys, T.P., … Materials Research Society
3 国際会議録 PLASMA-SURFACE INTERACTION LIMITS FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T.P., Bernhard, B.L., Chen, Y.L., Nemanich, R.J. Materials Research Society	9 国際会議録 A STUDY OF SURFACE AND SUBSURFACE PROPERTIES OF Si(100) AFTER HYDROGEN ION-BEAM EXPOSURE Liu, H. X., Schneider, T. P., Montgomery, J., Chen, Y. L., Buczkowski, A., Shimura, F., Nemanich, R. J., Maher, D. M., … MRS - Materials Research Society
4 国際会議録 REDUCTION OF SURFACE ROUGHENING AND SUBSURFACE DEFECTS IN H-PLASMA CLEANING OF Si (100) Schneider, T.P., Montgomery, J.S., Ying, H., Barnak, J.P., Chen, Y.L., Maher, D.M., Nemanich, R.J. Electrochemical Society	10 国際会議録 Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation Montgomery, J. S., Barnak, J. P., Silvestre, C., Hauser, J. R., Nemanich, R. J. MRS - Materials Research Society
5 国際会議録 PLASMA SURFACE INTERACTIONS AND SURFACE PRORERTIES FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T. P., Cho, J., Chen, Y. L., Maher, D. M., Nemanich, R. J. MRS - Materials Research Society	11 国際会議録 INVESTIGATION OF TITANIUM SILICON AND GERMANIUM REACTION Aldrich, D.B., Sayers, D.E., Nemanich, R.J. Materials Research Society
6 国際会議録 Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF … Yasuda, T., Ma, Y., Habermehl, S., Kim, S.S., Lucovsky, G., Schneider, T.P., Cho, J., Nemanich R.J. Materials Research Society	12 国際会議録 Plasma etching of Cr photomasks:parametric comparisons of plasma sources and process conditions Constantine,C., Johnson,D.J., Westerman,R.J., Coleman,T.P., Faure,T. SPIE-The International Society for Optical Engineering

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