EFFECT OF THE LOCAL DISORDER IN a-Si ON THE ELECTRONIC DENSITY OF STATES AT THE BAND EDGES

EFFECT OF THE LOCAL DISORDER IN a-Si ON THE ELECTRONIC DENSITY OF STATES AT THE BAND EDGES

著者名:

掲載資料名:

Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

219

発行年:

1991

開始ページ:

581

終了ページ:

586

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991132 [1558991131]

言語:

英語

請求記号:

M23500/219

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015703
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1991
会議開催地:	Anaheim, CA, USA
会議開催年:	1991.04.30-1991.05.03

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2 国際会議録 ELECTRONIC STATES IN THE GAP OF a-Si FROM BOND ANGLE VARIATIONS Davidson, B. N., Lucovsky, G. Materials Research Society	8 国際会議録 THE EFFECT OF GROWTH AMBIENTS ON THE LOCAL ATOMIC STRUCTURE OF THERMALLY GROWN SILICON DIOXIDE THIN FILMS Fitch, J. T., Lucovsky, G. Materials Research Society
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