CHARACTERISTICS OF a-Si:H SCHOTTKY PHOTODIODE BY USING Mo BARRIER METAL AT Al/ITO CONTACT
- 著者名:
- 掲載資料名:
- Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 219
- 発行年:
- 1991
- 開始ページ:
- 197
- 終了ページ:
- 202
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991132 [1558991131]
- 言語:
- 英語
- 請求記号:
- M23500/219
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
SPIE-The International Society for Optical Engineering |
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SPIE - The International Society of Optical Engineering |
10
国際会議録
Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes
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Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
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