DOUBLE IMPLANTATION IN GaAs
- 著者名:
- 掲載資料名:
- Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 216
- 発行年:
- 1991
- 開始ページ:
- 513
- 終了ページ:
- 516
- 総ページ数:
- 4
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991088 [1558991085]
- 言語:
- 英語
- 請求記号:
- M23500/216
- 資料種別:
- 国際会議録
類似資料:
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2
国際会議録
Gamma-ray generation in the picosecond-laser plasma with taking into account the prepulse influence
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国際会議録
Characterization of electrical and structural properties of ion-implanted GaAs by Raman scattering
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