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IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS

著者名:
Pearton, S.J.
Ren, F.
D'asaro, L.A.
Hobson, W.S.
Fullowan, T.R.
Lothian, J.
Abernathy, C.R.
Kopf, R.F.
Kuo, J.-M.
さらに 4 件
掲載資料名:
Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
216
発行年:
1991
開始ページ:
451
終了ページ:
458
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991088 [1558991085]
言語:
英語
請求記号:
M23500/216
資料種別:
国際会議録

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