InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY | 東京工業大学附属図書館文献データベース

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InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

著者名:

Vanhellemont, J.

さらに 4 件

掲載資料名:

Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

216

発行年:

1991

開始ページ:

181

終了ページ:

186

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991088 [1558991085]

言語:

英語

請求記号:

M23500/216

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015700
シリーズID:	PA00000011
会議名:	Symposium on long-wavelength semiconductor devices, materials, and processes
回次:	1990
会議開催地:	Boston, MA, USA
会議開催年:	1990.11.26-1990.11.29

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