CARBON INCORPORATION IN METAL ORGANIC VAPOR PHASE EPITAXY GROWN GaAs USING CHYX1-Y, TMG, AND AsH3

CARBON INCORPORATION IN METAL ORGANIC VAPOR PHASE EPITAXY GROWN GaAs USING CHYX1-Y, TMG, AND AsH3

著者名:

掲載資料名:

Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

204

発行年:

1991

開始ページ:

171

終了ページ:

176

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990968 [1558990968]

言語:

英語

請求記号:

M23500/204

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015688
シリーズID:	PA00000011
会議名:	Symposium on chemical perspectives of microelectronic materials
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1990.11.26-1990.11.28

類似資料:

1 国際会議録 INCORPORATION AND DIFFUSION OF P-TYPE DOPANTS FOR METAL ORGANIC VAPOR PHASE EPITAXY Tischler, M. A., Kuech, T. F. Materials Research Society	7 国際会議録 *NEW GROWTH CHEMISTRIES AND TECHNIQUES IN METAL-ORGANIC VAPOR PHSE EPITAXY Kuech, T. F Materials Research Society
2 国際会議録 SELECTIVE EPITAXY OF AlXGa1-XAs AND AlXGa1-XAs BASED STRUCTURES Goorsky, M.S., Kuech, T.F., Potemski, R. Materials Research Society	8 国際会議録 Incorporation of Er Into GaN by In Situ Doping During Halide Vapor-Phase Epitaxy Zhang, Rong, Kuech, T. F. MRS - Materials Research Society
3 国際会議録 GROWTH AND CHARACTERIZATION OF HIGHLY OXYGEN-DOPED GaAs Goorsky, M.S., Kuech, T.F., Mooney, P.M., Cardone, F., Potemski, R. Materials Research Society	9 国際会議録 Mechanisms of Carbon Incorporation of OMCVD of GaAs and Related Compounds Simka, H., Masi, M., Merchant, T., Jensen, K.F., Kuech, T.F. Electrochemical Society
4 国際会議録 In situ surface passivation of GaAs by thermal nitridation using metalorganic vapor phase epitaxy Sun, Jingxi, Himpsel, F.J., Ellis, A.B., Kuech, T.F. Materials Research Society	10 国際会議録 Lateral And Vertical Growth Study In The Initial Stages Of GaN Growth On Sapphire With ZnO Buffer Layers By Hydride Vapor Phase Epitaxy Gu, Shulin, Zhang, Rong, Zhang, Ling, Kuech, T.F. Materials Research Society
5 国際会議録 Carbon and Hydrogen-Induced Yellow Luminescence in Gallium Nitride Grown by Halide Vapor-Phase Epitaxy Zhang, R., Kuech, T. F. MRS - Materials Research Society	11 国際会議録 Growth of Thick GaN Films by Halide Vapor Phase Epitaxy Perkins, N.R., Horton, M.N., Matyi, R.J., Bandie, Z.Z., McGill, T.C., Kuech, T.F. Electrochemical Society
6 国際会議録 The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown Using Hydride Vapor Phase Epitaxy Dwikusuma, F., Kuech, T. F. Materials Research Society	12 国際会議録 1.3 μm InAs/GaAs Quantum Dots Directly Capped With GaAs Grown By Metal Organic Chemical Vapor Deposition Huang, K. -F., Hsieh, T. -P., Yeh, N. -T., Ho, W. -J., Chyi, J. -I., Wu, M. -C. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12