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IN SITU TEM STUDIES OF THE GROWTH OF STRAINED Si1-XGeX BY SOLID PHASE EPITAXY

著者名:
Paine, D.C.
Howard, D.J.
Evans, N.D.
Greve, D.W.
Racanelli, M.
Stoffel, N.G.
さらに 1 件
掲載資料名:
Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
202
発行年:
1991
開始ページ:
561
終了ページ:
566
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990944 [1558990941]
言語:
英語
請求記号:
M23500/202
資料種別:
国際会議録

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