OXYGEN BUBBLE FORMATION AND TRANSFORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION AND ANNEALING OF SILICON

OXYGEN BUBBLE FORMATION AND TRANSFORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION AND ANNEALING OF SILICON

著者名:

掲載資料名:

Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

201

発行年:

1991

開始ページ:

229

終了ページ:

234

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990074 [1558990070]

言語:

英語

請求記号:

M23500/201

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015685
シリーズID:	PA00000011
会議名:	Symposium on surface chemistry and beam-solid interactions
回次:	1990
会議開催地:	Boston, MA, USA
会議開催年:	1990.11.26-1990.11.29

類似資料:

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2 国際会議録 DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL Lee, J. D., Park, J. C., Venables, D., Krause, S. J., Roitman, P. MRS - Materials Research Society	8 国際会議録 STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS Krause, S.J., Wilson, S.R., Gregory, R.B., Paulson, W.M., Leavitt, J.A., McIntyre Jr., L.C., Seerveld, J.L., Stoss, P. Materials Research Society
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