PHOTOLUMINESCENCE FROM COHERENTLY STRAINED Si1-XGeX ALLOYS

PHOTOLUMINESCENCE FROM COHERENTLY STRAINED Si1-XGeX ALLOYS

著者名:

掲載資料名:

Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

198

発行年:

1990

開始ページ:

515

終了ページ:

520

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990876 [1558990879]

言語:

英語

請求記号:

M23500/198

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015682
シリーズID:	PA00000011
会議名:	Symposium on epitaxial heterostructures
回次:	1990
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.16-1990.04.19

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1 国際会議録 WELL-RESOLVED BAND-EDGE PHOTOLUMINESCENCE FROM STRAINED Si1-xGex LAYERS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION Sturm, J.C., Schwartz, P.V., Manoharan, H., Mi, Q., Lenchyshyn, L.C., Thewalt, M.L.W., Rowell. N.L., Noel, J.-P., … Materials Research Society	7 国際会議録 THE INFLUENCE OF STRAIN-MEDIATED MORPHOLOGICAL CHANGES ON THE STRUCTURAL AND OPTICAL PROPERTIES OF MBE-GROWN GeSi/Si Perovic, D.D., Whitehurst, J., Noel, J.P., Rowell, N.L., Houghton, D.C. Materials Research Society
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5 国際会議録 *SiGe/Si QUANTUM WELLS BY MBE: A PHOTOLUMINESCENCE STUDY Houghton, D.C., Rowell, N.L., Noel, J.-P., Aers, G., Davies, M., Wang, A., Perovic, D.D. Materials Research Society	11 国際会議録 Si-BASED PHOTONIC DEVICES BY MBE Houghton, D.C., Noel, J.-P., Rowell, N.L. Materials Research Society
6 国際会議録 BROAD BAND VS PHONON RESOLVED LUMINESCENCE IN Si1-X GeX/Si HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY Houghton, D.C., Rowell, N.L., Noel, J.-P., Dion, M.M., McCaffrey, J., Davies, M., Wang, A., Perovic, D.D. Materials Research Society	12 国際会議録 THE STABILITY OS Si-Si1-xGex STRAINES LAYER HETEROSTRUCTURES Houghton, D.C., Baribeau,J-M., Song, K, Perovic, D.D. Materials Research Society

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