Blank Cover Image

*ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III-V MATERIALS

著者名:
掲載資料名:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
198
発行年:
1990
開始ページ:
259
終了ページ:
264
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
言語:
英語
請求記号:
M23500/198
資料種別:
国際会議録

類似資料:

1 国際会議録 IMPROVED MOCVD GROWTH OF GaAs ON Si

Lum, R. M., Klingert, J. K., Davidson, B,. A., Lamont, M. G.

Materials Research Society
7 国際会議録 Alternative Gate Dielectric Materials

S. Van Elshocht, A. Hardy, S. De Gendt, C. Adelmann, P. K. Baumann, D. P. Brunco, M. R. Caymax, F. Conard, P. Delugas, …

Electrochemical Society
2 国際会議録 COMPARISON OF LOW VAPOR PRESSURE ORGANOARSENIC COMPOUNDS FOR MOVPE GROWTH OF GaAs

Lum, R. M., Klingert, J. K.

Materials Research Society
8 国際会議録 MOCVD GROWTH AND CHARACTERIZATION OF HIGH-QUALITY ZnSe ON GaAs

Chen, J. C., Yang, Bing, Semendy, F., Clark, W. W., III, Boyd, P. R., Bambha, N.

MRS - Materials Research Society
3 国際会議録 BAND-EDGE LUMINESCENCE OF MOCVD GaAs GROWN DIRECTLY ON SILICON

Lamont, M. G., Harris, T. D., Sauer, R., Lum, R. M., Klingert, J. K.

Materials Research Society
9 国際会議録 GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R.

Materials Research Society
4 国際会議録 COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY …

Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L.

Materials Research Society
10 国際会議録 ELECTRO-OPTIC MATERIALS BY SOLID SOURCE MOCVD

Hiskes, R., DiCarolis, S. A., Fouquet, J., Lu, Z., Feigelson, R. S., Route, R. K., Leplingard, F., Foster, C. M.

MRS - Materials Research Society
5 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si

Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., …

Materials Research Society
11 国際会議録 Simulation of the MOCVD Reactor for ZnO Growth

Liu, S. M., Gu, S. L., Qin, F., Zhu, S. M., Ye, J. D., Liu, W., Zhou, X., Zhang, R., Shi, Y., Zheng, Y. D.

Trans Tech Publications
6 国際会議録 Deposition and Etching Processes in InGaAsP Materials

Lum, R.M.

Electrochemical Society
12 国際会議録 Design alternatives for barrel shifters

Pillmeier, M.R., Schulte, M.J., Walters III, E.G.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12