Blank Cover Image

DEFECTS IN MBE-GROWN GaAs/ScXEr1-Xas/GaAs LAYERS

著者名:
掲載資料名:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
198
発行年:
1990
開始ページ:
177
終了ページ:
182
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
言語:
英語
請求記号:
M23500/198
資料種別:
国際会議録

類似資料:

1 国際会議録 CHARACTERIZATION OF ErAs/GaAs AND GaAs/ErAs/Gas STRUCTURES

Zhu, Jane G., Palmstrom, Chris J., Mounier, Suzanne, Barry Carter, C.

Materials Research Society
7 国際会議録 INITIAL STAGES OF GaAs GROWTH ON Sc1-XErXAs SURFACES

Finstad, Terje G., Palmstrom, C.J., Mounier, S., Keramidas, V.G., Zhu, J.G., Carter, C.B.

Materials Research Society
2 国際会議録 HIGH-RESOLUTION IMAGING OF CoGa/GaAs AND ErAs/GaAs INTERFACES

Zhu, Jane G., McKernan, Stuart, Palmstrom, Chris J., Barry Carter, C.

Materials Research Society
8 国際会議録 REDUCTION OF DEFECT LEVELS IN Si AND Si/Ge LAYERS GROWN BY MBE

Gibbings, C. J., Tuppen, C. G.

Materials Research Society
3 国際会議録 MISFIT DISLOCATIONS AT MISMATCHED EPITACTIC HETEROJUNCTIONS

Zhu, Jane G., Carter, Barry C., Palmstrom, Chris. J.

Materials Research Society
9 国際会議録 THE DEFECT STRUCTURE OF ION-IMPLANTED AlxGal-xAs/GaAs SUPERLATTICES

DeCooman, B.C., Carter, C.B., Ralston, J., Wicks, G.W., Eastman, L.F.

Materials Research Society
4 国際会議録 DEFECTS AND INTERFACES IN GaAs GROWN ON Si

McKernan, S., Zhu, J.G., Carter, C.B., Caridi, E., Schaff, W.

Materials Research Society
10 国際会議録 DISLOCATIONS IN GaAs/Si INTERFACES

Zhu, Jane G., McKernan, S., Carter, C. B., Schaff, W. J., Eastman, L. F.

Materials Research Society
5 国際会議録 INTERFACE DEFECTS IN GaAs AND GaAs-AlXGa1-XAs GROWN ON Ge

Cho, N. -H., McKernan, S., Wagner, D. K., Carter, C. B.

Materials Research Society
11 国際会議録 CHARACTERIZATION OF MBE GaAs LAYERS GROWN AT 200°C-300°C

Wie, C. R., Xie, K., Berdin, T. T., Fronko, J. G., Look, D. C., Evans, K. R., Stutz, C. E.

Materials Research Society
6 国際会議録 FABRICATION AND ELECTRICAL PROPERTIES OF MBE GROWN METAL-GALLIUM AND METAL-ARSENIC COMPOUNDS ON Ga1-XA1XAs

Palmstrom, C. J., Garrison, K. C., Fimland, B.-O., Sands, T., Bartynski, R. A.

Materials Research Society
12 国際会議録 THE INFLUENCE OF ARSENIC FLUX IN THE DEFECT STRUCTURE OF MBE DEPOSITED GaAs AND Ga1-xA1xAs

Hatzopoulos, Z., Kiriakidis, G., Georgacillas, A., Roditis, N., Christou, A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12