ELECTRONIC STATES IN THE GAP OF a-Si FROM BOND ANGLE VARIATIONS

ELECTRONIC STATES IN THE GAP OF a-Si FROM BOND ANGLE VARIATIONS

著者名:

掲載資料名:

Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

192

発行年:

1990

開始ページ:

279

終了ページ:

284

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990814 [155899081X]

言語:

英語

請求記号:

M23500/192

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015676
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon technology
回次:	1990
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.17-1990.04.20

類似資料:

1 国際会議録 EFFECT OF THE LOCAL DISORDER IN a-Si ON THE ELECTRONIC DENSITY OF STATES AT THE BAND EDGES Davidson, B.N., Lucovsky, G., Bernholc, J. Materials Research Society	7 国際会議録 Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen Lucovsky, G. MRS - Materials Research Society
2 国際会議録 DEFECT STATES AND STRUCTURAL DISORDER IN a-Si Davidson, B. N., Lucovsky, G., Bernholc, J. Materials Research Society	8 国際会議録 ESTIMATION OF DEFECT STATE DENSITIES FROM BULK PHOTOELECTRONIC PROPERTIES OF A-SI,Ge:H ALLOYS Parsons, G. N., Lucovsky, G. Materials Research Society
3 国際会議録 ENERGY DIFFERENCES BETWEEN THE Si AND THE Ge DANGLING BOND DEFECTS IN a-Si1-XGeX Alloys Cho, S.M., Davidson, B.N., Lucovsky, G. Materials Research Society	9 国際会議録 The Valence Band Tail Density of States and Bond Angle Distortion in a-SiNx:H Alloys Budaguan, B. G., Aivazov, A. A., Stryahilev, D. A. MRS - Materials Research Society
4 国際会議録 POLYHYRIDE BONDING GROUPS IN PECVD AMORPHOUS Si THIN FILMS Davidson, B.N., Parsons, G.N., Wang, C., Lucovsky, G. Materials Research Society	10 国際会議録 BOND-ANGLE VARIATION AND MICROSTRUCTURE IN HYDROGENATED AMORPHOUS SILICON Berntsen, A.J.M., van den Boogaard, M.J., van Sark, W.G.J.H.M., van der Weg, W.F. Materials Research Society
5 国際会議録 BOND ANGLE DISORDER IN TETRAHEDRALLY BONDED AMORPHOUS SILICON Wong, C.K., Lucovsky, G. Materials Research Society	11 国際会議録 Bonding Defects in Hydrogenated Amorphous Silicon Lucovsky, G., Yang, H. MRS - Materials Research Society
6 国際会議録 GROWTH AND CHARACTERIZATION OF Si-GaP AND Si-GaP-Si HETEROSTRUCTURES Dietz, N., Habermehl, S., Kelliher, J. T., Lucovsky, G., Bachmann, K. J. MRS - Materials Research Society	12 国際会議録 Spectroscopic Studies of Band Edge Electronic and Defect States in Elemental High-k Oxide Dielectrics and Si Oxynitride Alloys onto Si(100) Substrates G. Lucovsky, H. Seo, L. Fleming, M. Ulrich, J. Lüning Electrochemical Society

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