Blank Cover Image

PLASMA ETCHING OF InP AND RELATED MATERIALS IN ELECTRON CYCLOTRON RESONANCE CH4/H2/Ar DISCHARGES

著者名:
Pearton, S. J.
Chakrabarti, U. K.
Kinsell, A. P.
Emerson, A. B.
Johnson., D.
Constantine, C.
さらに 1 件
掲載資料名:
Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
190
発行年:
1991
開始ページ:
297
終了ページ:
302
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990791 [1558990798]
言語:
英語
請求記号:
M23500/190
資料種別:
国際会議録

類似資料:

1 国際会議録 ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES

Pearton, S. J., Ren, F., Lothian, J. R., Fullowan, T. R., Kopf, R. F., Chakrabati, U. K., Hui, S. P., Emerson, A. B., …

Materials Research Society
7 国際会議録 Deposition of TiN by electron cyclotron resonance-metal organic molecular beam epitaxy

Wisk, P. W., Abernathy, C. R., Pearton, S. J., Ren, F., Katz, A., Bohling, D. A.

MRS - Materials Research Society
2 国際会議録 ETCHING OF DIAMOND WAFERS WITh ELECTRON-CYCLOTRON RESONANCE PLASMAS

Chakraborty, R.N., Reinhard, D.K., Goldman, P.D.

Electrochemical Society
8 国際会議録 Chlorine-Based Plasma Etching of GaN

Shul, R. J., Briggs, R. D., Pearton, S. J., Vartuli, C. B., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C.

MRS - Materials Research Society
3 国際会議録 Spectroscopic Ellipsometry Study of HgCdTe Epilayer Surfaces During Electron Cyclotron Resonance Plasma Etching

Johnson, J. N., Dinan, J. H., Singley, K. M., Martinka, M., Johs, B.

MRS - Materials Research Society
9 国際会議録 Recent Improvements in Dry Etching of Hg1-x CdxTe by CH4-Based Electron-Cyclotron-Resonance Plasmas

Seelmann-Eggebert, M., Rar, A., Zimmermann, H., Meisen, P.

MRS - Materials Research Society
4 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS

Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R.

Materials Research Society
10 国際会議録 HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

Pearton, S. J., Chakrabarti, U. K., Katz, A., Ren, F., Fullowan, T. R., Abernathy, C R., Hobson, W. S.

Materials Research Society
5 国際会議録 Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source

Constantine, C., Johnson, D., Barratt, C., Shul, R. J., McClellan, G. B., Briggs, R. D., Rieger, D. J., Karlicek, R. F., …

MRS - Materials Research Society
11 国際会議録 Etch Induced Gate Oxide Degradation in an Electron Cyclotron Resonance Plasma Etcher

Lee, S.H., Lee, D-D., Kim, J-H., Shin, K-S., Park, H-S., Choi, H-S.

Electrochemical Society
6 国際会議録 Electron Cyclotron Resonance Etching Characteristics of GaN in Plasmas with and without Hydrogen

Zhang, L., Ramer, J., Brown, J., Zheng, K., Lester, L. F., Hersee, S. D.

MRS - Materials Research Society
12 国際会議録 Electron Cyclotron Resonance Etching of SiC in SF6/O2 and NF3/O2 Plasmas

Ren, F., Grow, J. M., Bhaskaran, M., Lee, J. W., Vartuli, C. B., Lothian, J. R., Flemish, J. R.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12