LOW-TEMPERATURE DEFECT-INDUCED AGING OF GaAs GROWN BY MOLECULAR BEAM EPITAXY

LOW-TEMPERATURE DEFECT-INDUCED AGING OF GaAs GROWN BY MOLECULAR BEAM EPITAXY

著者名:

Szafranek, I.

掲載資料名:

Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

184

発行年:

1990

開始ページ:

109

終了ページ:

114

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990739 [1558990739]

言語:

英語

請求記号:

M23500/184

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015668
シリーズID:	PA00000011
会議名:	Symposium on degradation mechanisms in III-V compound semiconductor devices and structures
回次:	1990
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.17-1990.04.18

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