DEGRADATION OF HYDROGEN-PASSIVATED p-TYPE LAYERS IN GaAs BY MINORITY CARRIER INJECTION AND REVERSE BIAS ANNEALING
- 著者名:
- 掲載資料名:
- Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 184
- 発行年:
- 1990
- 開始ページ:
- 87
- 終了ページ:
- 92
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990739 [1558990739]
- 言語:
- 英語
- 請求記号:
- M23500/184
- 資料種別:
- 国際会議録
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