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*PROPERTIES OF DX CENTERS IN AlxGa1-x As AND EFFECTS ON HETEROJUNCTION DEVICES

著者名:
Mooney, P. M.  
掲載資料名:
Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
184
発行年:
1990
開始ページ:
39
終了ページ:
48
総ページ数:
10
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990739 [1558990739]
言語:
英語
請求記号:
M23500/184
資料種別:
国際会議録

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