*HIGH-RESOLUTION ELECTRON MICROSCOPY OF PROCESS-INDUCED DEFECTS IN SILICON
- 著者名:
- 掲載資料名:
- High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 183
- 発行年:
- 1990
- 開始ページ:
- 67
- 終了ページ:
- 78
- 総ページ数:
- 12
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990722 [1558990720]
- 言語:
- 英語
- 請求記号:
- M23500/183
- 資料種別:
- 国際会議録
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12
国際会議録
TRANSMISSION ELECTRON MICROSCOPY OF HYDROGEN-INDUCED DEFECTS IN LOW TEMPERATURE EPITAXIAL SILICON
Materials Research Society |