POST-ANNEALING EFFECT ON THE RELIABILITY OF ULTRA-THIN SILICON DIOXIDE WITH POLYSILICON GATE

POST-ANNEALING EFFECT ON THE RELIABILITY OF ULTRA-THIN SILICON DIOXIDE WITH POLYSILICON GATE

著者名:

掲載資料名:

Polysilicon thin films and interfaces

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

182

発行年:

1990

開始ページ:

321

終了ページ:

326

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990715 [1558990712]

言語:

英語

請求記号:

M23500/182

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015666
シリーズID:	PA00000011
会議名:	Polysilicon Thin Films and Interfaces : Symposium
回次:	1990
会議開催地:	San Francisco, CA, USA
会議開催年:	1990.04.17-1990.04.19

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