SUBMICRON p-CHANNEL MOS DEVICES WITH BORON DOPED POLYSILICON GATES FABRICATED BY RAPID THERMAL PROCESSING
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*MATERIALS, MECHANICAL, AND THERMAL CONSIDERATIONS OF HIGH DENSITY MULTI-CHIP ELECTRONIC PACKAGES
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Piezoresistance Gauge Factors in Heavily Boron-Doped Polysilicon from Infrared Piezoreflectance
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