Blank Cover Image

CHARACTERIZATION OF A RAPID THERMAL ANNEALED TiNXOY /TiSi2 BARRIER LAYER

著者名:
掲載資料名:
Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
181
発行年:
1990
開始ページ:
527
終了ページ:
530
総ページ数:
4
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990708 [1558990704]
言語:
英語
請求記号:
M23500/181
資料種別:
国際会議録

類似資料:

1 国際会議録 CHARACTERIZATION OF RAPID THERMALLY NITRATED TITATNIUM FILMS CONTACTING SILICIDED AND NON-SILICIDED JUNCTIONS

Chittipeddi, S., Kelly, M. J., Dziuba, C. M., Irwin, R. B., Kahora, P. M., Kannan, V. C, Cochran, W. T.

Materials Research Society
7 国際会議録 Rapid Thermal Annealing on Cu(In,Ga)Se2 Films and Solar Cells

Wang, Xmuege, Li, Sheng S., Craciun, V., Yoon, S., Howard, J, M., Easwaran, S., Manasreh, O., Crisalle, O. D., Anderson, …

Materials Research Society
2 国際会議録 THE EFFECT OF POLYSILICON DOPING (USING ION IMPLANTATION OR PBr3 DIFFUSION OR INSITU DOPING) ON TiSi2 FORMATION

Chittipeddi, S., Dziuba, C. M, Kelly, M. J.,, Kannan, V. C., Irwin, R. B., Kahora, P. M., Cochoran, W. T.

Materials Research Society
8 国際会議録 SYNTHESIS OF TWO-LAYER TiB2-TiSi2 STRUCTURES BY BORON IMPLANTATION INTO TITANIUM FILM AND RAPID THERMAL. ANNEALING

Tokarev, V.V., Demchenko, A.I., Ivanov, A.I., Borisenko, V.E., Zarovsky, D.I.

Materials Research Society
3 国際会議録 COMPARATIVE STUDIES OF GATE OXIDES USING THERMAL, STACKED GATE, AND RAPID THERMAL OXIDATION

Chittipeddi, S., Roy, P. K., Kannan, V. C., Singh, R., Dziuba, C. M.

Materials Research Society
9 国際会議録 RAPID THERNAL ANNEALING TiSi2 FOR INTERCONNECTS

Rosser, P. J., Tomkins, G. J.

Materials Research Society
4 国際会議録 RAPID THERMAL ANNEALING OF DEPOSITED SiO2 FILMS

Wong, J., Lu, T-M., Cohen, S. S., Mehta, S.

Materials Research Society
10 国際会議録 8 Characterization of Ultra-Shallow Implanted P+ Layer on P-Type Silicon Substrates after Flash Anneal and Conventional Rapid Thermal Anneal

Suzuki, T., Seto, M., Suzuki, N., Kang, K., Yoo, W. S.

Electrochemical Society
5 国際会議録 Stress Enhanced Arsenic Diffusion in Titanium Salicided Junctions by Implantation into C49 TiSi2 and Rapid Thermal Annealing

Sohn, D. K., Park, J-S., Bae, J-U., Huh, Y-J., Park, J. W.

MRS - Materials Research Society
11 国際会議録 CHARACTERIZATION OF DOPE Si-TiSi2 BILAYERS FORMED BY ION BEAM MXING AND RAPID THERMAL ANNEALING

Maex, K., De Keersmaecker, R. F., Alkemade, P. F. A.

Materials Research Society
6 国際会議録 Fabrication of C54-TiSi₂ Thin Films Using Cathodic Arc Deposition and Rapid Thermal Annealing

Hui Xia, William R. Knudsen, Paul L. Bergstrom

Materials Research Society
12 国際会議録 DEPENDENCE OF SUBSTRATE ORIENTATION ON THE SYNTHESIS OF CoSi2 LAYERS FORMED BY ION IMPLANTATION & RAPID THERMAL ANNEALING

Gwilliam, Russell M., Raeson, Karen J., Webb, Roger P., Spraggs, Russells S., Sealy, Brian J.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12