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ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs

著者名:
Pearton, S. J.
Ren, F.
Abernathy, C. R.
Katz, A.
Hobson, W. S.
Chu, S. N. G.
Kovalchick, J.
さらに 2 件
掲載資料名:
Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
181
発行年:
1990
開始ページ:
491
終了ページ:
496
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990708 [1558990704]
言語:
英語
請求記号:
M23500/181
資料種別:
国際会議録

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