Blank Cover Image

THE ROLE OF CHARGED POINT DEFECTS ON THE DIFFUSION BEHAVIOR OF SILICON IN GaAs

著者名:
掲載資料名:
Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
163
発行年:
1990
開始ページ:
691
終了ページ:
696
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990517 [1558990518]
言語:
英語
請求記号:
M23500/163
資料種別:
国際会議録

類似資料:

1 国際会議録 DIFFUSION OF ION IMPLANTED Mg AND Be IN GaAs

Robinson, H.G., Deal, M.D., Stevenson, D.A.

Materials Research Society
7 国際会議録 Effect of Ion Enery and Dose on the Diffusion of Silicon Implanted into Gallium Arsenide

C. C. Lee, M. D. Deal, J. C. Bravman

Electrochemical Society
2 国際会議録 Modeling the Transient Diffusion Behavior of Beryllium in Gallium Arsenide and the Effect of Encapsulant Material on Non-Equilibrium Point Defect Populations

Haddara, Y.M., Deal, M.O., Bravman, J.C.

Electrochemical Society
8 国際会議録 SPUTTERING INDUCED CHANGES IN DEFECT MORPHOLOGY AND DOPANT DIFFUSION FOR Si IMPLANTED GaAs: INFLUENCE OF ION ENERGY AND IMPLANT TEMPERATURE

Robinson, H. G., Lee, C. C., Haynes, T. E., Allen, E. L., Deal, M. D., Jones, K. S.

MRS - Materials Research Society
3 国際会議録 Defects and diffusion in Si+ implanted GaAs

Jones, K. S., Robinson, H. G., Haynes, T. E., Deal, M. D., Lee, C. C., Allen, E. L.

MRS - Materials Research Society
9 国際会議録 NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

Plummer, J.D.

Electrochemical Society
4 国際会議録 Point Defects, Diffusion, and Gettering in Silicon

Gosele, U., Conrad, D., Werner, P., Tong, Q-Y., Gafiteanu, R., Tan, T. Y.

MRS - Materials Research Society
10 国際会議録 THE ENTROPY OF DEFECTS AND DIFFUSION IN SILICON

Bar-Yam, Y., Joannopoulos, J. D.

Materials Research Society
5 国際会議録 Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution

Rybin,P.V., Kulikov,D.V., Trushin,Yu.V., Petzoldt,J.

SPIE-The International Society for Optical Engineering
11 国際会議録 Modeling the Diffusion Behavior of Implanted Beryllium in Gallium Arsenide Using Suprem - IV

C.J. Hlu, M. D. Deal, H. G. Robinson, J. D. Plummer

Electrochemical Society
6 国際会議録 A New Model for the Anomalous Diffusion of Grown-In Magnesium in GaAs

Haddara, Y.M., Deal, M.D., Robinson, H.G., Bravman, J.C.

Electrochemical Society
12 国際会議録 DEFECTS RELATED TO MIXING BEHAVIOR OF HIGHLY SILICON-DOPED GaAs/A1As SUPERLATTICES

Theodore, N. D., Carter, C. B., Mei, P., Schwarz, S.A., Harbison, J. P., Venkatesan, T.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12