ATOMIC LAYER EPITAXY OF GaAs ON Ge SUBSTRATES

ATOMIC LAYER EPITAXY OF GaAs ON Ge SUBSTRATES

著者名:

掲載資料名:

Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

163

発行年:

1990

開始ページ:

647

終了ページ:

652

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990517 [1558990518]

言語:

英語

請求記号:

M23500/163

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015647
シリーズID:	PA00000011
会議名:	Symposium on impurities, defects, and diffusion in semiconductors
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

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