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MEASUREMENTS OF ENHANCED OXYGEN DIFFUSION IN SILICON DURING THERMAL DONOR FORMATION: NEW EVIDENCE FOR POSSIBLE MECHANISMS

著者名:
掲載資料名:
Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
163
発行年:
1990
開始ページ:
555
終了ページ:
560
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990517 [1558990518]
言語:
英語
請求記号:
M23500/163
資料種別:
国際会議録

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