DECAY MEASUREMENTS OF FRE AND BOUND EXCITON RECOMBINATION IN DOPED GaAs/GaA1As QUANTUM WELLS
- 著者名:
Bergman, J.P. Holtz, P.O. Monemar, B. Sundaram, M. Merz, J.L. Gossard, A.C. - 掲載資料名:
- Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 163
- 発行年:
- 1990
- 開始ページ:
- 325
- 終了ページ:
- 330
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990517 [1558990518]
- 言語:
- 英語
- 請求記号:
- M23500/163
- 資料種別:
- 国際会議録
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Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
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