ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE
- 著者名:
- 掲載資料名:
- Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 163
- 発行年:
- 1990
- 開始ページ:
- 303
- 終了ページ:
- 306
- 総ページ数:
- 4
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990517 [1558990518]
- 言語:
- 英語
- 請求記号:
- M23500/163
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP
Trans Tech Publications |
7
国際会議録
MODIFIED OPTICALLY DETECTED MAGNETIC RESONANCE TECHNIQUE FOR STUDIES OF DEFECTS IN Si AND GaAs
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
9
国際会議録
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
12
国際会議録
OPTICALLY DETECTED MAGNETIC RESONANCE STUDIES OF COMPLEX ANTISITE-RELATED DEFECTS IN BULK LEC GaP
Materials Research Society |