ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BY MOLECULAR BEAM EPITAXY

ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BY MOLECULAR BEAM EPITAXY

著者名:

Szafranek, I.

掲載資料名:

Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

163

発行年:

1990

開始ページ:

193

終了ページ:

196

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990517 [1558990518]

言語:

英語

請求記号:

M23500/163

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015647
シリーズID:	PA00000011
会議名:	Symposium on impurities, defects, and diffusion in semiconductors
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

類似資料:

1 国際会議録 LOW-TEMPERATURE DEFECT-INDUCED AGING OF GaAs GROWN BY MOLECULAR BEAM EPITAXY Szafranek, I., Stockman, S. A., Szafranek, M., McCollum, M. J., Plano, M. A., Miller, W. R., Stillman, G. E. Materials Research Society	7 国際会議録 Electrical Properties for InN Grown by Molecular Beam Epitaxy Schaff, W.J., Lu, H., Eastman, L. F., Walukiewicz, W., Man Yu, K., Keller, S., Kurtz, S., Keyes, B., Gevila, L. Electrochemical Society
2 国際会議録 Photoluminescence Of GaN Grown By Molecular Beam Epitaxy On Freestanding GaN Template Reshchikov, M.A., Yun, F., Huang, D., He, L., Morkoc, H., Park, S.S., Lee, K.Y. Materials Research Society	8 国際会議録 ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY Shibata, H., Makita, Y., Yamada, A., Ohnishi, N., Mori, M., Nakayama, Y., Beye, A.C., Mayer, K.M., Takahashi, T., … Materials Research Society
3 国際会議録 REASSESSMENT OF ACCEPTOR PASSIVATION MODELS IN p-TYPE HYDROGENATED GaAs Szafranek, I., Stillman, G.E. Materials Research Society	9 国際会議録 The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy Weckwerth, M.V., Harris, J.S., Jr., Pao, Y-C. Electrochemical Society
4 国際会議録 Luminescence properties of GaAs epitaxial layers grown by liquid phase epitaxy and molecular beam epitaxy Petroff, P.M. North Holland	10 国際会議録 High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy Orsila,S.L., Toivonen,M., Savolainen,P., Vilokkinen,V., Melanen,P., Pessa,M., Saarinen,M.J., Uusimaa,P., Corvini,P., … SPIE - The International Society for Optical Engineering
5 国際会議録 Hydrogen in III-V Device Structures Stockman,S.A., Stillman,G.E. Trans Tech Publications	11 国際会議録 COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY Wu, B. J., Wang,, K. L., Mii, Y. J,, Yoon, Y. S., Wu,. A. T., George,T.,, Weber, E. Materials Research Society
6 国際会議録 Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy Wagner,J., Ramsteiner,M., Ashwin,M.J., Fahy,M.R., Newman,R.C., Braun,W., Ploog,K. Trans Tech Publications	12 国際会議録 MOLECULAR BEAM EPITAXY OF LOW TEMPERATURE GROWN GaAs PHOTOCONDUCTORS Dykaar, D.R., Eaglesham, D.J., Keil, U.D., Greene, B.I., Saeta, P.N., Pfeiffer, L.N., Kopf, R.F., Darack, S.B., West, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12