STRUCTURAL DEFECTS IN GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

STRUCTURAL DEFECTS IN GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

著者名:

掲載資料名:

Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

162

発行年:

1990

開始ページ:

537

終了ページ:

542

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990500 [155899050X]

言語:

英語

請求記号:

M23500/162

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015646
シリーズID:	PA00000011
会議名:	Symposium on diamond, silicon carbide, and related wide bandgap semiconductors
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

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