A NEW DEEP ACCEPTOR IN EPITAXIAL CUBIC SiC

A NEW DEEP ACCEPTOR IN EPITAXIAL CUBIC SiC

著者名:

掲載資料名:

Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

162

発行年:

1990

開始ページ:

495

終了ページ:

500

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990500 [155899050X]

言語:

英語

請求記号:

M23500/162

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015646
シリーズID:	PA00000011
会議名:	Symposium on diamond, silicon carbide, and related wide bandgap semiconductors
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

類似資料:

1 国際会議録 PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY OF CUBIC SiC GROWN BY CHEMICAL VAPOR DEPOSITION ON Si SUBSTRATES Freitas Jr., J. A., Bishop, S. G., Addamiano, A., Klein, P. H., Kim, H. J., Davis, R. F. Materials Research Society	7 国際会議録 Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC Sridhara,S.G., Nizhner,D.G., Devaty,R.P., Choyke,W.J., Troffer,T., Pensl,G., Larkin,D.J., Kong,H.S. Trans Tech Publications
2 国際会議録 Detection of Magnetic Resonance on Shallow Donor-Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC Glaser, E. R., Kennedy, T. A., Brown, S. W., Freitas, J. A., Jr., Perry, W. G., Bremser, M. D., Weeks, T. W., Jr., … MRS - Materials Research Society	8 国際会議録 CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers S.I. Maximenko, J.A. Freitas Jr., Y.N. Picard, P.B. Klein, R.L. Myers-Ward Trans Tech Publications
3 国際会議録 PHOTOLUMINESCENCE SPECTROSCOPY OF DIAMOND FILMS Freitas, Jr., J.A., Butler, J.E., Bishop, S.G., Carrington, W.A., Strom, U. Materials Research Society	9 国際会議録 Synthesis and Electrochemical Properties of New Graphite Heterointercalation Compounds of Acceptor-Acceptor Type Avdeev,V.V., Ionov,S.G., Kulbachinski,V.A., Semenenko,K.N., Udod,H.B. Trans Tech Publications
4 国際会議録 RESIDUAL DONORS IN β-SIC FILMS Carlos, W. E., Moore, W. J., Siebenman, P..G., Freitas Jr., J. A., Kaplan, R., Bishop, S. G., Nordquist Jr., P. E. R., … Materials Research Society	10 国際会議録 Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC Linnarsson,M.K., Janson,M., Schoner,A., Nordell,N., Karlsson,S., Svensson,B.G. Trans Tech Publications
5 国際会議録 Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy Rowland, L. B., Dunne, G. T., Freitas, J. A. Jr. Trans Tech Publications	11 国際会議録 Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates J. Zhang, G.Y. Chung, E.K. Sanchez, M.J. Loboda, S.G. Sundaresan Trans Tech Publications
6 国際会議録 Lateral epitaxial overgrowth for defect-free GaN substrates Freitas,J.A.,Jr., Saparin,G.V., Nam,O-H., Zheleva,T.S., Davis,R.F. SPIE - The International Society for Optical Engineering	12 国際会議録 High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCI J. Zhang, J. Mazzola, S.G. Sunkari, G. Stewart, P.B. Klein Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12