PHOTOREFLECTANCE OF A GaAs/In0.5Ga0.5P(ORDERED) SINGLE QUANTUM WELL GROWN BY ATOMIC LAYER EPITAXY
- 著者名:
- 掲載資料名:
- Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 160
- 発行年:
- 1990
- 開始ページ:
- 679
- 終了ページ:
- 684
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990487 [1558990488]
- 言語:
- 英語
- 請求記号:
- M23500/160
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
9
国際会議録
High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
Materials Research Society |
Materials Research Society | |
Materials Research Society |
Materials Research Society |