DISLOCATION DENSITY REDUCTION IN GaAs EPILAYERS ON Si USING STRAINED LAYER SUPERLATTICES

DISLOCATION DENSITY REDUCTION IN GaAs EPILAYERS ON Si USING STRAINED LAYER SUPERLATTICES

著者名:

掲載資料名:

Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

160

発行年:

1990

開始ページ:

375

終了ページ:

382

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990487 [1558990488]

言語:

英語

請求記号:

M23500/160

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015644
シリーズID:	PA00000011
会議名:	Symposium on layered structures
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.12.01

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