Blank Cover Image

STRUCTURAL AND ELECTRONIC PROPERTIES OF GaAs/InGaAs/GaAs HETEROSTRUCTURES

著者名:
掲載資料名:
Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
160
発行年:
1990
開始ページ:
117
終了ページ:
122
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990487 [1558990488]
言語:
英語
請求記号:
M23500/160
資料種別:
国際会議録

類似資料:

1 国際会議録 ANISOTROPIC STRUCTURAL AND ELECTRONIC PROPERTIES OF InGaAs/GaAs HETEROJUNCTIONS

Goldman, R. S., Rammohan, K., Raisanen, A., Goorsky, M., Brillson, L. J., Rich, D. H., Wieder, H. H., Kavanagh, K. L.

MRS - Materials Research Society
7 国際会議録 DEEP LEVEL DEFECT CHARACTERIZATION OF MBE GROWN InGaAS/GaAS HETEROSTRUCTURES

Buchwald, W.R., Zhao, J.H., Rong, F.C.

Materials Research Society
2 国際会議録 High Performance Pseudomorphic InGaP/InGaAs Power HEMTs

Ren, F., Lothian, J.P., Tseng, K., Kuo, J.M., Lin, J., Weiner, J.S., Ryan, R.W., Tate, A., Chen, Y.K.

Electrochemical Society
8 国際会議録 Optimization of InGaAs/InP DHBT Devices for Use in High Speed Circuits

Kopf, R.F., Wang, Y.-C., Hamm, R.A., Ryan, R.W., Tate, A., Melendes, M.A., Pullela, R., Georgiou, G., Mattia, J.-P., …

Electrochemical Society
3 国際会議録 Nano-Scale Imaging of Compositional Defect and Dopant Distributions in Semiconductor Laser Heterostructures

Hull, R., Moore, M., Bahnck, D., Geva, M., Karlicek, R.F., Jr., Stevie, F.A., Walker, J.F.

Electrochemical Society
9 国際会議録 Complementary GaAs Junction-Gated Heterostructure Field Effect Transistor Fabrication for Integrated Circuits

Baca, A.G., Zolper, J.C., Sherwin, M.E., Robertson, P.J., Shul, R.J., Howard, A.J., Rieger, D.J., Klem, J.F.

Electrochemical Society
4 国際会議録 MOLECULAR BEAM EPITAXY OF GaAS/AlSb OPTICAL DEVICE LAYERS ON Si (100)

Malik, R.J., van der Ziel, J.P., Levine, B.F., Bethea, C.G., Petroff,P.M., Walker, J., Hamm, R.

Materials Research Society
10 国際会議録 *STRAIN RELAXATION MECHANISMS IN LATTICE MISMATCHED EPITAXY

Hull, R., Bean, J. C., Bonar, J. M., Paticolas, L.

Materials Research Society
5 国際会議録 Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures for High-Speed Circuit Applications

Kopf, R. F., Hamm, R. A., Malik, R. J., Ryan, R. W., Burm, J., Tate, A., Chen, Y-K., Georgiou, G., Lang, D. V., Geva, …

MRS - Materials Research Society
11 国際会議録 Electronic States of n-type ｦﾄ-Doping in GaAs Heterostructures

Scolfaro,L.M.R., Leite,J.R., Mendonca,C.A.C., Beliaev,D., Shibli,S.M., Silva,E.C.F.Da, Meneses,E.A.

Trans Tech Publications
6 国際会議録 In -Situ Electron Microscope Studies of Misfit Dislocation Introduction into GexSi1-x/Si Heterostructures

Hull R., Bean C. J., Bahnck D., Bonar M. J., Buescher C.

Plenum Press
12 国際会議録 *OXIDE FERROELECTRIC/CUPRATE SUPERCONDUCTOR HETEROSTRUCTURES: GROWTH AND PROPERTIES

Ramesh, R., Chan, W.K., Gilchrist, H., Wilkens, B., Sands, T., Tarascon, J.M., Keramidas, V.G., Evans, Jr., J.T., Gealy, …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12