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THE INITIAL STAGES OF MBE GROWTH OF InSb ON GaAs (100) - A HIGH MISFIT HETEROINTERFACE

著者名:
掲載資料名:
Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
159
発行年:
1990
開始ページ:
63
終了ページ:
68
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990470 [155899047X]
言語:
英語
請求記号:
M23500/159
資料種別:
国際会議録

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