VERY THIN 2D GaAs FILMS ON Si DURING THE EARLY STAGES OF GROWTH BY MBE

VERY THIN 2D GaAs FILMS ON Si DURING THE EARLY STAGES OF GROWTH BY MBE

著者名:

掲載資料名:

Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

159

発行年:

1990

開始ページ:

15

終了ページ:

20

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990470 [155899047X]

言語:

英語

請求記号:

M23500/159

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015643
シリーズID:	PA00000011
会議名:	Symposium on atomic scale structure of interfaces
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.27-1989.1129

類似資料:

1 国際会議録 *INITIAL STAGES OF GaAs EPITAXY ON Si Biegelsen, D.K., Ponce, F.A., Krusor, B.S., Tramontana, J.C., Yingling, R.D., Bringans, R.D., Fenner, D.B. Materials Research Society	7 国際会議録 STUDY OF INITIAL STAGES OF HETEROEPITAXY USING GRADED THICKNESS SAMPLES Biegelsen, D. K., Ponce, F. A., Krusor, B. S., Tramontana, J. C., Yingling, R. D. Materials Research Society
2 国際会議録 DEFECT GENERATION IN THE INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON SILICON BY MBE. PONCE,F.A., BIEGELSEN,D.K., TRAMONTANA,J.C., SMITH,A.J. Trans Tech Publications	8 国際会議録 EPITAXIAL GROWTH OF FERROELECTRIC THIN FILMS ON GaAs WITH MgO BUFFER LAYRS BY PULSED LASER DEPOSITION Nashimoto, K., Fork, D.K., Ponce, F.A., Geballe, T.H. Materials Research Society
3 国際会議録 INITIAL STAGES OF EPITAXIAL GROWTH OF GaAS ON (100) SILICON Biegelsen, D.K., Ponce, F.A., Smith, A.J., Tramontana, J.C. Materials Research Society	9 国際会議録 YBCO FILMS AND BUFFER-LAYERS GROWN IN-SITU BY PULSED LASER DEPOSITION Connell, G.A.N., Fenner, D.B., Fork, D.K., Boyce, J.B., Ponce, F.A., Bridges, F., Geballe, T.H. Materials Research Society
4 国際会議録 *INITIAL STAGES OF GROWTH OF ZnSe ON Si Bringans, R.D., Biegelsen, D.K., Swartz, L.-E., Ponce, F.A., Tramontana, J.C. Materials Research Society	10 国際会議録 DEFECT GENERATION AND SUPPRESSION DURING THE IMPURITY INDUCED LAYER DISORDERING OF QUANTUM SIZED GaAs/GaInP LAYERS Thornton, R.L., Bour, D.P., Treat, D., Ponce, F.A., Tramontana, J.C., Endicott, F.J. Materials Research Society
5 国際会議録 XPS ANALYSIS OF Y-Ba-Cu-O AND Zr-O THIN FILMS AND INTERFACES WITH SILICON SUBSTRATES Fenner, D.B., Viano, A.M., Connell, A.N., Boyce, J.B., Fork, D.K., Ponce, F.A., Tramontana, J.C. Materials Research Society	11 国際会議録 STRAIN IN GRADED THICKNESS GaAs/Si HETEROEPITAXIAL STRUCTURES GROWN WITH A BUFFER LAYER Nemanich, R.J., Biegelsen, D.K., Street, R.A., Downs, B., Krusor, B.S., Yingling, R.D. Materials Research Society
6 国際会議録 THE INFLUENCE OF SUBSTRATE SURFACE CHEMISTRY ON GaAs-ON-Si GROWTH Bringans, R.D., Olmstead, M.A., Ponce, F.A., Biegelsen, D.K., Krusor, B.S., Yingling, R.D. Materials Research Society	12 国際会議録 LASER INCORPORATION OF SILICON INTO GaAs-A1GaAs HETEROSTUCTURES Epler, J.E., Ponce, F.A., Tramontana, J.C., Endicott, F.J., Paoli, T.L. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12