ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2

ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2

著者名:

掲載資料名:

In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

158

発行年:

1990

開始ページ:

425

終了ページ:

430

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990463 [1558990461]

言語:

英語

請求記号:

M23500/158

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015642
シリーズID:	PA00000011
会議名:	Symposium on in-situ patterning
回次:	1989
会議開催地:	Boston, MA, USA
会議開催年:	1989.11.29-1989.12.01

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