As AND B ION IMPLANTATION THROUGH Mo AND INTO Mo-SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION
- 著者名:
Angelucci, R. Merli, M. Solmi, S. Armigliato, A. Gabilli, E. Govoni, D. Poggi, A. - 掲載資料名:
- Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 157
- 発行年:
- 1990
- 開始ページ:
- 751
- 終了ページ:
- 758
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990456 [1558990453]
- 言語:
- 英語
- 請求記号:
- M23500/157
- 資料種別:
- 国際会議録
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9
国際会議録
Exploring Alternative Annealing Methods for Shallow Junction Formation in Ion Implanted Silicon
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