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IN-SITU KELVIN PROVE STUDY OF THE SnO2/p(A-Si:H) INTERFACE: EFFECTS OF HYDROGEN AND ARGON PLASMA TREATMENT

著者名:
掲載資料名:
Amorphous silicon technology, 1989 : symposium held April 25-28, 1989, San Diego, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
149
発行年:
1989
開始ページ:
681
終了ページ:
686
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990227 [1558990224]
言語:
英語
請求記号:
M23500/149
資料種別:
国際会議録

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