GROWTH AND CHARACTERIZATIONS OF GaAs ON InP WITH DIFFERENT BUFFER STRUCTURES BY MOLECULAR BEAM EPITAXY

GROWTH AND CHARACTERIZATIONS OF GaAs ON InP WITH DIFFERENT BUFFER STRUCTURES BY MOLECULAR BEAM EPITAXY

著者名:

Liu, Xiaoming

掲載資料名:

Chemistry and defects in semiconductor heterostructures

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

148

発行年:

1989

開始ページ:

297

終了ページ:

302

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990210 [1558990216]

言語:

英語

請求記号:

M23500/148

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015633
シリーズID:	PA00000011
会議名:	Symposium on Chemistry and Defects in Semiconductor Heterostructures ; MRS Spring Meeting
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.24-1989.04.27

類似資料:

1 国際会議録 INITIAL NUCLEATION STUDIES OF HETEROEPITAXIAL GaAs FILSM ON Si SUBSTRATES BY MODULATED MOLECULAR BEAM EPITAXY Lee, Henry P., Liu, Xiaoming, Wang,Shyh, George, Thomas, Weber, Eicke R., Liliental-Weber, Zuzana Materials Research Society	7 国際会議録 GaN Epitaxial Growth by Molecular Beam Epitaxy Utilizing AlGaN Buffer Layer With Nanopipes Yun, F., He, L., Reshchikov, M. A., Morkoc, H., Jasinski, J., Liliental-Weber, Z. Materials Research Society
2 国際会議録 THE PHOTOLUMINESCENCE AND TEM STUDIES OF PATTERNED GaAs FILMS ON Si SUBSTRATE GROWN BY MOLECULAR BEAM EPITAXY Lee, Henry P., Huang, Yi-He, Liu, Xiaoming, Lin, Hong, Smith, John S., Weber, Eicke R., Yu, Peter, Wang, Shyh, … Materials Research Society	8 国際会議録 AN INVESTIGATION ON THE LATTICE SITE LOCATION OF THE EXCESS ARSENIC ATOMS IN GaAs LAYERS GROWN BY LOW TEMPERATURE MOLECULAR BEAM EPITAXY Yu, Kin Man, Liliental-Weber, Z. Materials Research Society
3 国際会議録 NUCLEATION AND EFFECT STRUCTURES OF GaAs FILMS GROWN ON REACTIVE ION ETCHED Si SUBSTRATES Lee, Henry P., George, Thomas, Sohn, Hunchil, Tu, Jau, Weber, Eicke R., Wang, Shyh Materials Research Society	9 国際会議録 Influence of growth rate and temperature on the structure of low temperature GaAs Liliental-Weber,Z., Claverie,A., Werner,P., Schaff,W., Weber,E.R. Trans Tech Publications
4 国際会議録 THE INFLUENCE OF SUBSTRATE PATTERNING ON THREADING DISLOCATION DENSITY AND RESIDUAL STRESS IN GaAs/Si HETEROEPITAXIAL LAYERS Soh, Hyunchul, Weber, Eicke R., Tu, Jay, Lee, Henry P., Wang, Shyh Materials Research Society	10 国際会議録 THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS Liliental-Weber, Z., Weber, E. R., Washburn, J., Liu, T. Y., Kroemer, H. Materials Research Society
5 国際会議録 A NEW APPROACH TO GROW STRAIN-FREE GaAs ON Si Sohn, Hyunchul, Weber, Eicke R., Tu, Jay, Wang, Shyh Materials Research Society	11 国際会議録 COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY Wu, B. J., Wang,, K. L., Mii, Y. J,, Yoon, Y. S., Wu,. A. T., George,T.,, Weber, E. Materials Research Society
6 国際会議録 GROWTH OF (110) GaAs/GaAs BY MOLECULAR BEAM EPITAXY Parechanian, L. T., Weber, E. R., Hierl, T. L. Materials Research Society	12 国際会議録 CHARACTERIZATION OF GaAs/Si/GaAs HETEROINTERFACES Liliental-Weber, Zuzanna, Mariella Jr., Raymond P. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12