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GROWTH OF GaAs ON Si USING A1GaP INTERMEDIATE LAYER

著者名:
Noto, N.
Nozaki, S.
Egawa, T.
Soga, T.
Jimbo, T.
Umeno, M.
さらに 1 件
掲載資料名:
Chemistry and defects in semiconductor heterostructures
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
148
発行年:
1989
開始ページ:
247
終了ページ:
252
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990210 [1558990216]
言語:
英語
請求記号:
M23500/148
資料種別:
国際会議録

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