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EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si

著者名:
Nozaki, S.
Noto, N.
Okada, M.
Egawa, T.
Soga,. T
Jimbo, T.
Umeno, M.
さらに 2 件
掲載資料名:
Chemistry and defects in semiconductor heterostructures
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
148
発行年:
1989
開始ページ:
235
終了ページ:
240
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990210 [1558990216]
言語:
英語
請求記号:
M23500/148
資料種別:
国際会議録

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