OHMIC CONTACT FORMATION MECHANISM IN THE Ge/Pd/N-GaAs SYSTEM

OHMIC CONTACT FORMATION MECHANISM IN THE Ge/Pd/N-GaAs SYSTEM

著者名:

Marshall, E. D.

掲載資料名:

Chemistry and defects in semiconductor heterostructures

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

148

発行年:

1989

開始ページ:

163

終了ページ:

168

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990210 [1558990216]

言語:

英語

請求記号:

M23500/148

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015633
シリーズID:	PA00000011
会議名:	Symposium on Chemistry and Defects in Semiconductor Heterostructures ; MRS Spring Meeting
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.24-1989.04.27

類似資料:

1 国際会議録 A HIGH DEPTH RESOLUTION BACKSIDE SECONDARY ION MASS SPECTROMETRY TECHNIQUE USED FOR STUDYING METAL/GaAs CONTACTS Palmstrom, C.J., Schwarz, S.A., Marshall, E.D., Yablonovitch, E., Harbison, J.P., Schwartz, C.L., Florez, L., Gmitter, … Materials Research Society	7 国際会議録 STUDIES OF In0.53Ga0.47As/InP SUPERLATTICES MIXING AND CONVERSION Schwarz, S. A., Mei, P., Hwang, D. M., Schwartz, C. L., Venkatesan, T., Palmstrom, c. J., Stoffel, N. G., Bhat, R. Materials Research Society
2 国際会議録 BEHAVIOR OF DOPANT-RELATED DEFETS IN A1GaAs SUPERLATTICES Theodore, N.D., Mei, P., Schwarz, S.A., Carter, C.B., Palmstrom, C., Harbison, J.P., Florez, L.T. Materials Research Society	8 国際会議録 *GROWTH AND PROPERTIES OF (A1,Ga)As(NiA1/ (A1,Ga) As: AN EPITAXICAL SEMICONDUCTOR/METAL/SEMICONDUCTOR SYSTEM Sands, T., Harbison, J. P., Tabatabaie, N., Cha, W. K., Gilchrist, H. L., Schwwarz, S. A., Schwartz, C. L., Florez, L. … Materials Research Society
3 国際会議録 STUDY OF THE CARRIER CONCENTRATION EFFECT ON Si ENHANCED AlGaAS/GaAS SUPERLATTICE MIXING Mei, Ping, Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Florez, L. A. Materials Research Society	9 国際会議録 OPTICAL REFLECTANCE AND RHEED TRANSIENTS DURING MBE GROWTH ON (001) GaAs Aspnes, D. E., Harbison, J., P., Studna, A. A., Florez, L. T. Materials Research Society
4 国際会議録 BACKSIDE SIMS STUDY OF Ge/Pd NON-ALLOYED OHMIC CONTACTS ON InGaAs Schwarz, S. A., Palmstrom, C. J., Bhat, R., Koza, M., Wang, L. C., Park, M. H. MRS - Materials Research Society	10 国際会議録 THE Ge/Pd/n-GaAs OHMIC CONTACT INTERFACE STUDIED BY BACKSIDE RAMAN SPECTROSCOPY Watte, J., Silverans, R. E., Munder, H., Palmstom, C. J., Florez, L. T., Hove, M. Van, Borghs, G., Wuyts, K. MRS - Materials Research Society
5 国際会議録 Pt and Pd silicides and Pd germanide as contact metallizations for GaAs Marshall, E. D., Wu, C. S., Scott, D. M., Lau, S. S., Kuech, T. F. North-Holland	11 国際会議録 DEFECTS RELATED TO MIXING BEHAVIOR OF HIGHLY SILICON-DOPED GaAs/A1As SUPERLATTICES Theodore, N. D., Carter, C. B., Mei, P., Schwarz, S.A., Harbison, J. P., Venkatesan, T. Materials Research Society
6 国際会議録 NON-ALLOYED OHMIC CONTACTS TO n-GaAs USING EPITAXIAL Ge LAYERS Sawada, T., Chen, W.X., Marshall, E.D., Kavanagh, K.L., Kuech, T.F., Pai, C.S., Lau, S.S. Materials Research Society	12 国際会議録 *BURIED METAL/III-V SEMICONDUCTOR HETEROEPITAXY: APPROACHED TO LATTICE MATCHING Palmstrom, C. J., Harbison, J. P., Zhu, J. C., Carter, C. B, Finstad, T. G., Mounier, S., Carter, C. B., Florez, L. T., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12