OXYGEN DOPED SILICON SURFACE LAYERS BY ION IMPLANTATION

OXYGEN DOPED SILICON SURFACE LAYERS BY ION IMPLANTATION

著者名:

掲載資料名:

Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

147

発行年:

1989

開始ページ:

247

終了ページ:

252

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990203 [1558990208]

言語:

英語

請求記号:

M23500/147

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015632
シリーズID:	PA00000011
会議名:	Symposium on ion beam processing of advanced electronic materials
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.25-1989.04.27

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2 国際会議録 HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON Srikanth, K., Chu, M., Ashok, S., Nguyen, N., Vedam, K. Materials Research Society	8 国際会議録 Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices K. Vassilevski, S.K. Roy, N. Wood, A.B. Horsfall, N.G. Wright Trans Tech Publications
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