AMORPHIZATION AND ANNEALING OF 6H SiC IMPLANTED WITH N-TYPE, P-TYPE OR ISOVALENT DOPANTS

AMORPHIZATION AND ANNEALING OF 6H SiC IMPLANTED WITH N-TYPE, P-TYPE OR ISOVALENT DOPANTS

著者名:

掲載資料名:

Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

147

発行年:

1989

開始ページ:

113

終了ページ:

118

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990203 [1558990208]

言語:

英語

請求記号:

M23500/147

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015632
シリーズID:	PA00000011
会議名:	Symposium on ion beam processing of advanced electronic materials
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.25-1989.04.27

類似資料:

1 国際会議録 Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications	7 国際会議録 Columnar Pore Growth in n-Type 6H SiC Ke, Y., Yan, F., Devaty, R.P., Choyke, W.J. Trans Tech Publications
2 国際会議録 Porous Structure of Anodized p-Type 6H SiC Shishkin, Y., Ke, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications	8 国際会議録 1.54 ｦﾌm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC Yoganathan, M., Choyke, W. J., Devaty, R. P., Pensl, G., Edmond, J. A. MRS - Materials Research Society
3 国際会議録 Photoluminescence and DLTS Measurements of 15 MeV Erbium Implanted 6H and 4H SiC Shishkin, Y., Choyke, W. J., Devaty, R. P., Achtziger, N., Opfermann, Th., Witthuhn, W. Trans Tech Publications	9 国際会議録 DEFECT FORMATION AND HYDROGEN TRAPPING IN H+ IMPLANTED FZ SILICON Choyke, W. J., Spitznagel, J. A., Doyle, N. J., Wood, S., Irwin, R. B. Materials Research Society
4 国際会議録 Nano-Columnar Pore Formation in the Photo-Electrochemical Etching of n-Type 6H SiC Y. Ke, R.P. Devaty, W.J. Choyke Trans Tech Publications	10 国際会議録 Brillouin Spectra of Porous p-Type 6H-SiC Andrews, G.T., Young, C., Polomska, A., Clouter, M.J., Ke, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications
5 国際会議録 Dopant-Related Complexes in SiC Gali, A., Miro, J., Deak, P., Devaty, R. P., Choyke, W. J. Trans Tech Publications	11 国際会議録 Triangular Pore Formation in Highly Doped n-Type 4H SiC Shishkin, Y., Choyke, W.J., Devaty, R.P. Trans Tech Publications
6 国際会議録 Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC Frank, T., Pensl, G., Bai, S., Devaty, R. P., Choyke, W. J. Trans Tech Publications	12 国際会議録 EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E., Shishkin, Y., Devaty, R.P., Choyke, W.J. Electrochemical Society

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