CRYSTAL STABILITY AND MICROSTRUCTURAL EVOLUTION IN POLYCRYSTALLINE Si FILSM DURING ION IRRADIATION

CRYSTAL STABILITY AND MICROSTRUCTURAL EVOLUTION IN POLYCRYSTALLINE Si FILSM DURING ION IRRADIATION

著者名:

掲載資料名:

Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

147

発行年:

1989

開始ページ:

107

終了ページ:

112

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990203 [1558990208]

言語:

英語

請求記号:

M23500/147

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015632
シリーズID:	PA00000011
会議名:	Symposium on ion beam processing of advanced electronic materials
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.25-1989.04.27

類似資料:

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2 国際会議録 STABILITY OF NANOMETER-SIZE Si CRYSTALS IN AMORPHOUS Si THIN FILMS UNDER ION IRRADIATION Yang, Chih M., Atwater, Harry A. MRS - Materials Research Society	8 国際会議録 AMPLIFICATION OF MISORIENTATION OF Ge FILMS ON Si(100) DURING ION-ASSISTED MOLECULAR BEAM EPITAXY Tsai, Cho-Jen, Atwater, Harry A. Materials Research Society
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