BISTABLE DEFECTS INDUCED IN GaAs BY H2 PLASMA PROCESS

BISTABLE DEFECTS INDUCED IN GaAs BY H2 PLASMA PROCESS

著者名:

掲載資料名:

Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

146

発行年:

1989

開始ページ:

425

終了ページ:

430

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990197 [1558990194]

言語:

英語

請求記号:

M23500/146

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015631
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal annealing/chemical vapor deposition and integrated processing
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.25-1989.04.28

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