Blank Cover Image

PROPERTIES OF MBE GROWN HETEROSTRUCTURES OF GaAs/InSb AND InP/InSb

著者名:
Asom, M. T.
Fitzgerald,m E. A.
Thiel,. F. A.
People, R,.
Eaglesham. D.
Luther, L.
Sputz, S. K.
Kimerling, L. C.
さらに 3 件
掲載資料名:
III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
145
発行年:
1989
開始ページ:
399
終了ページ:
404
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990180 [1558990186]
言語:
英語
請求記号:
M23500/145
資料種別:
国際会議録

類似資料:

1 国際会議録 THERMAL ANNEALING AND COOLING-RATE DEPENDENT ELECTRONIC PROPERTIES OF BULK GaAs CRVSTALS

Parsey Jr., J. M., Asom, M. T., Kimerling, L. C., Sauer, R., Thiel, F. A.

Materials Research Society
7 国際会議録 ION IMPLANTATION IN InSb GROWN ON GaAs

Rao, M.V., Echard, R., Thompson, P.E., Berry, A.K., Mulpuri, S., Moore, F.G.

Materials Research Society
2 国際会議録 EVALUATION OF LARGE DIAMETER InP SUBSTRATE MATERIAL

Trapp, K. D. C., Asom, M. T., Carver, G. E., Monberg, E. M., Thiel, F. A., Bams, R. L.

Materials Research Society
8 国際会議録 Properties of InP Simultaneously Doped with Zinc and Sulfur Grown by MOCVD

Alavanja, C. M., Pinzone, C. J., Sputz, S. K., Geva, M.

MRS - Materials Research Society
3 国際会議録 Nonstoichiometry Related Acceptors in GaAs

Kimerling,L.C., Asom,M.T., Thiel,F.A., Parsey,J.M.Jr.

Trans Tech Publications
9 国際会議録 InSb focal plane array(FPAs)grown by molecular beam epitaxy(MBE)

Ashley,T., Baker,I.M., Burke,T.M., Dutton,D.T., Haigh,J.A., Hipwood,L.G., Jefferies,R., Johnson,A.D., Knowles,P., …

SPIE - The International Society for Optical Engineering
4 国際会議録 Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source

Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, …

Trans Tech Publications
10 国際会議録 Localised vibrational mode absorption of silicon donors and beryllium acceptors in MBE GaAs,InAs and InSb

Addinall,R., Newman,R.C., Ferguson,I.T., Mohades-Kassai,A., Brozel,M.R., Sharma,V.K.M., McPhail,D., Sangster,M.J.L.

Trans Tech Publications
5 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si

Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., …

Materials Research Society
11 国際会議録 MBE GROWTH OF GaAs ON POROUS SILICON

Lin, T. L., Sadwick, L., Wang., K. L., Rhee, S. S., Kao, Y. C., Hull, R, Nieh, C. W., Jamieson, D. N., Liu, J. K., …

Materials Research Society
6 国際会議録 Surface and Interface Properties of InSb Epitaxial Thin Films Grown on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition

Li, K., Tan, K. L., Pelczynski, M., Feng, Z. C., Wee, A. T. S., Lin, J. Y., Ferguson, I., Stall, R. A.

MRS - Materials Research Society
12 国際会議録 Microstructure and Optical Properties of GaN Films Grown on Porous SiC Substrate By MBE

Yun, F., Reshchikov, M.A., He, L., King, T., Huang, D., Morkoc, H., Inoki, C.K., Kuan, T.S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12