DEPENDENCE OF THREADING DISLOCATION DENSITY ON SUBSTRATE MISORIENTATION In0.15Ga0.85AS GROWN ON GaAs(100)
- 著者名:
- 掲載資料名:
- III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 145
- 発行年:
- 1989
- 開始ページ:
- 385
- 終了ページ:
- 392
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990180 [1558990186]
- 言語:
- 英語
- 請求記号:
- M23500/145
- 資料種別:
- 国際会議録
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12
国際会議録
Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
MRS - Materials Research Society |