COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY

COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY

著者名:

Wu, B. J.

掲載資料名:

III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

145

発行年:

1989

開始ページ:

343

終了ページ:

348

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990180 [1558990186]

言語:

英語

請求記号:

M23500/145

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015630
シリーズID:	PA00000011
会議名:	III-V Heterostructures for Electronic/Photonic Devices : Symposium
回次:	1989
会議開催地:	San Diego, CA, USA
会議開催年:	1989.04.24-1989.04.27

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