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ELECTRICAL ACTIVATION BEHAIOR OF ION IMPLANTED SILICON IN GALLIUM ARSENIDE DURING RAPID THERMAL ANNEALING

著者名:
掲載資料名:
Advances in materials, processing, and devices in III-V compound semiconductors
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
144
発行年:
1989
開始ページ:
495
終了ページ:
500
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
言語:
英語
請求記号:
M23500/144
資料種別:
国際会議録

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